Piezoelectrically tuned silicon nitride ring resonator

نویسندگان

  • WARREN JIN
  • RONALD G. POLCAWICH
  • PAUL A. MORTON
  • JOHN E. BOWERS
چکیده

Typical integrated optical phase tuners alter the effective index. In this paper, we explore tuning by geometric deformation. We show that tuning efficiency, VπL, improves as the device size shrinks down to the optimal bend radius, contrary to conventional index-shift based approaches where VπL remains constant. We demonstrate that this approach is capable of ultra-low power tuning across a full FSR in a low-confinement silicon nitride based ring resonator of 580 μm radius. We demonstrate record performance with VFSR = 16 V, VπL = 3.6 V dB, VπLα = 1.1 V dB, tuning current below 10 nA, and unattenuated tuning response up to 1MHz. We also present optimized designs for high confinement silicon nitride and silicon based platforms with radius down to 80 μm and 45 μm, respectively, with performance well beyond current stateof-the-art. Applications include narrow-linewidth tunable diode lasers for spectroscopy and non-linear optics, optical phased array beamforming networks for RF antennas and LIDAR, and optical filters for WDM telecommunication links. © 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement OCIS codes: (130.3120) Integrated optics devices, (230.5750) Resonators, (230.4685) Optical microelectromechanical

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Tunability of Piezoelectric MEMS Ring Resonator Based Filter

The influence of piezoelectric actuator design on a two-port piezoelectrically transduced micro-electro-mechanical (MEMS) ring resonator frequency tuning performance has been investigated. A cubic silicon carbide (3C-SiC) ring resonator was fabricated with a lead–zirconium–titanate (PZT) piezoelectric actuator and sensor integrated on the surface of the ring. Measurements of the transmission fr...

متن کامل

High confinement micron-scale silicon nitride high Q ring resonator.

We demonstrate high confinement, low-loss silicon nitride ring resonators with intrinsic quality factor (Q) of 3*10(6) operating in the telecommunication C-band. We measure the scattering and absorption losses to be below 0.065dB/cm and 0.055dB/cm, respectively.

متن کامل

Molecular-absorption-induced thermal bistability in PECVD silicon nitride microring resonators.

The wavelength selective linear absorption in communication C-band is investigated in CMOS-processed PECVD silicon nitride rings. In the overcoupled region, the linear absorption loss lowers the on-resonance transmission of a ring resonator and increases its overall quality factor. Both the linear absorption and ring quality factor are maximized near 1520 nm. The direct heating by phonon absorp...

متن کامل

Compact narrow-linewidth integrated laser based on a low-loss silicon nitride ring resonator.

We design and demonstrate a compact, narrow-linewidth integrated laser based on low-loss silicon nitride waveguides coupled to a III-V gain chip. By using a highly confined optical mode, we simultaneously achieve compact bends and ultra-low loss. We leverage the narrowband backreflection of a high-Q microring resonator to act as a cavity output mirror, a single-mode filter, and a propagation de...

متن کامل

On-chip switching of a silicon nitride micro-ring resonator based on digital microfluidics platform.

We demonstrate the switching of a silicon nitride micro ring resonator (MRR) by using digital microfluidics (DMF). Our platform allows driving micro-droplets on-chip, providing control over the effective refractive index at the vicinity of the resonator and thus facilitating the manipulation of the transmission spectrum of the MRR. The device is fabricated using a process that is compatible wit...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2018